1 description the HMMC-5032 is a mmic power amplifier designed for use in wireless transmitters that operate within the 17.7 ghz to 32 ghz range. it pro- vides 22 dbm of output power and 8 db of small?signal gain from a small easy-to-use device. the HMMC-5032 was designed to be driven by the hmmc-5040 (20?40 ghz) or the hmmc-5618 (5.9?20 ghz) mmic amplifier for linear transmit applications. this device has input and out- put matching circuitry for use in 50 ohm environments. agilent HMMC-5032 17.7-32 ghz amplifier data sheet absolute maximum ratings [1] 1. absolute maximum ratings for continuous operation unless otherwise noted. symbol parameters/conditions min. max. units v d1,2 drain supply voltages 5 volts v g1,2 gate supply voltages - 3.0 0.5 volts det.bias applied detector bias (optional) 5 volts i dd total drain current 460 ma p in rf input power 23 dbm t ch channel temperature [2] 2. refer to dc specifications / physical properties table for derating information. 170 c t a backside ambient temperature - 55 +95 c t st storage temperature - 65 +170 c t max maximum assembly temperature 300 c chip size: 1.4 0.78 mm (55.1 30.7 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 80 80 m m (3.2 3.2 mils) features ? 22 dbm output p ( - 1db) ? 8 db gain ? 50 w input/output matching ? small size ? bias: 4.5 volts, 250 ma
2 dc specifications/physical properties [1] 1. backside ambient operating temperature t a = 25 c unless otherwise noted. symbol parameters/conditions min. typ. max. units v d1,2 drain supply operating voltages 2 4.5 5 volts i d1 first stage drain supply current (v dd = 4.5 v, v g1 @ - 0.8 v) 100 140 ma i d2 second stage drain supply current (v dd = 4.5 v, v gg @ - 0.8 v) 150 320 ma v g1,2 gate supply operating voltages (i dd @ 250 ma) - 0.8 volts v p pinch-off voltage (v dd = 4.5 v, i dd 10 ma) - 2 - 1.2 volts det. bias detector bias voltage (optional) v d1,2 5 volts q ch-bs thermal resistance [2] (channel-to-backside at t ch = 160 c) 2. thermal resistance ( c/watt) at a channel temperature t( c) can be estimated using the equation: q (t) @ q ch-bs [t( c)+273] / [160 c+273]. 67 c/watt t ch channel temperature [3] (t a = 85 c, mttf > 10 6 hrs v dd = 4.5 v, i dd = 250 ma ) 3. derate mttf by a factor of two for every 8 c above t ch . 160 c notes: rf specifications (t a = 25 c, z 0 = 50 w , v dd = 4.5 v, i dd = 250 ma) symbol parameters/conditions low band specifications upper band specifications units min. typ. max. min. typ. max. bw operating bandwidth 17.7 26.5 25 31.5 ghz gain small signal gain 7 8 6 7 db d gain/ d t temperature coefficient of gain 0.02 0.02 db/ c p - 1db output power at 1db gain compression 21 22 21 22 dbm p sat saturated output power [1] 1. devices operating continuously beyond 1 db gain compression may experience power degradation. 24 24 dbm (rl in ) min minimum input return loss 8 9 10 15 db (rl out ) min minimum output return loss 9 10 15 20 db isolation minimum reverse isolation 35 30 db notes:
3 storage, handling, and assem- bly. mmic esd precautions, han- dling considerations, die attach and bonding methods are criti- cal factors in successful gaas mmic performance and reliabil- ity. agilent application note #54, "gaas mmic esd, die attach and bonding guidelines" pro- vides basic information on these subjects. additional references: pn# 3, " hmmc-5040 and HMMC-5032 demo, 20?32 ghz high gain medium power amp," and pn# 4, " HMMC-5032 inter- modulation distortion." applications the HMMC-5032 mmic is a broadband power amplifier de- signed for use in transmitters that operate in various frequen- cy bands between 17.7 ghz and 32 ghz. it can be attached to the output of the hmmc-5040 (20? 40 ghz) or the hmmc-5618 (5.9?20 ghz) mmic amplifier, increasing the power handling capability of transmitters re- quiring linear operation. biasing and operation the recommended dc bias con- dition is with both drains (v d1 and v d2 ) connected to single 4.5 volt supply and both gates (v g1 and v g2 ) connected to an adjust- able negative voltage supply. the gate voltage is adjusted for a total drain supply current of typically 250 ma. the rf input and output are ac?coupled. an optional output power detec- tor network is also provided. de- tector sensitivity can be adjusted by biasing the diodes with typically 1 to 5 volts ap- plied to the det?bias terminal. simply connecting det?bias to the v d2 supply is a convenient method of biasing this detector network. the differential volt- age between the det?ref and det?out bonding pads can be correlated to the rf power emerging from the rf output port. no ground wires are needed be- cause ground connections are made with plated through?holes to the backside of the device. assembly techniques it is recommended that the elec- trical connections to the bond- ing pads be made using 0.7?1.0 mil diameter gold wire. the mi- crowave/millimeter?wave con- nections should be kept as short as possible to minimize induc- tance. for assemblies requiring long bond wires, multiple wires can be attached to the rf bond- ing pads. gaas mmics are esd sensitive. esd preventive measures must be employed in all aspects of figure 1. simplified schematic diagram rf input rf output v d2 v d1 v g2 v g1 stage 1 stage 2 det.out r1=10 k w r1 det. bias det.ref d1 ref. d2 r1 c
4 26 11 rf output power (dbm) 22 18 0 14 6 10 2 12 13 14 15 16 17 18 19 20 21 22 23 24 ( d e t . o u t ) - ( d e t . r e f . ) ( d b m v ) ( d e t . o u t ) - ( d e t . r e f . ) ( m v ) 130 110 90 70 30 50 10 0 frequency = 28 ghz v dd = 4.5v, i dd = 250ma det bias=open frequency (ghz) 29 25 23 21 19 17 15 27 17 25 33 19 21 23 27 29 31 29 25 23 21 19 17 15 27 p sat p - 1db p - 1 d b ( d b m ) temperature (t a, c) 11 9 5 7 12 10 8 6 - 55 - 35 - 15 5 25 45 65 85 4 s m a l l - s i g n a l g a i n ( d b ) v dd = 4.5v, i dd = 250ma (device mounted in a connectorized package) v dd =4.5v, i dd =250ma, det bias=open i n p u t r e t u r n l o s s ( d b ) frequency (ghz) 0 6 12 18 24 30 0 6 12 18 24 10 15 20 25 30 35 40 45 o u t p u t r e t u r n l o s s ( d b ) 30 24 20 16 12 10 8 28 26 22 18 14 30 24 20 16 12 10 8 28 26 22 18 14 190 250 280 310 i dd (ma) output rl input rl (17.7?31.5 ghz) spec. range p - 1 d b ( d b m ) p s a t ( d b m ) p sat p -1db frequency = 28 ghz v dd = 4.5v, i dd = 250ma isol. gain v dd =4.5v, i dd =250ma, det bias=open 12 10 8 6 4 2 0 0 10 20 30 40 50 60 i s o l a t i o n ( d b ) 10 15 20 25 30 35 40 45 frequency (ghz) s m a l l - s i g n a l g a i n ( d b ) (17.7?31.5 ghz) spec. range figure 2. gain and isolation vs. frequency figure 3. input and output return loss vs. frequency v dd = 4.5v, i dd = 250ma 0.02 db/ c 220 figure 7. detector voltages vs. output power for various detector bias voltages figure 6. output power vs. frequency figure 4. gain vs. temperature figure 5. output power vs. total drain current 30 p s a t ( d b m )
5 12 10 8 6 4 2 16 14 8 6 4 2 10 12 rf output power (dbm) 15 16 17 18 19 20 21 22 23 24 25 26 g a i n ( d b ) e f f i c i e n c y ( % ) gain effic. (%) frequency = 28 ghz v dd = 4.5v, i dd = 250ma figure 10. bonding pad locations 12 10 8 6 4 2 400 360 320 240 200 g a i n ( d b ) i d d ( m a ) 15 16 17 18 19 20 21 22 23 24 rf output power (dbm) frequency = 28 ghz v dd = 4.5v gain i dd figure 9. gain and total drain current vs. output power figure 8. gain compression and efficiency vs. power out det. out rf input v d2 det. bias det. ref v d1 1305 m m 790 m m 335 m m 80 m m 1390 m m 1060 m m 1205 m m 400 m m 210 m m 100 m m 525 m m 710 m m 85 m m 355 m m 810 m m v g1 v g2 280 rf output
6 rf input rf output v dd v gg > 100 pf 250 ma v dd > 100 pf 115 ma v dd v dd v gg v gg > 100 pf > 100 pf > 100 pf > 100 pf 250 ma 225?300 ma > 800 pf > 800 pf rf output rf input hmmc-5040 HMMC-5032 hmmc-5618 HMMC-5032 figure 12. assembly diagram illustrating the HMMC-5032 cascaded with the hmmc-5618 for 17.7-20 ghz applications figure 11. assembly diagram illustrating the HMMC-5032 cascaded with the hmmc-5040 for 20-32 ghz applications > 100 pf
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifications. in this data sheet the term typical refers to the 50th per- centile performance. for additional information contact your local agilent technologies? sales representative. www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6271 2451 india, australia, new zealand: (+65) 6271 2394 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (+65) 6271 2194 malaysia, singapore: (+65) 6271 2054 taiwan: (+65) 6271 2654 data subject to change. copyright ? 2002 agilent technologies, inc. obsoletes 5966-4572e august 30, 2002 5988-2710en
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